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| Part Number | PHD66NQ03LT,118 | PHD96NQ03LT,118 | PHB66NQ03LT,118 | PHD63NQ03LT,118 |
|---|---|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. | Nexperia USA Inc. | NXP USA Inc. |
| Product Status | Obsolete | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V | 25 V | 25 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) | 75A (Tc) | 66A (Tc) | 68.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V | 10V | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 25A, 10V | 4.95mOhm @ 25A, 10V | 10.5mOhm @ 25A, 10V | 13mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA | 2V @ 1mA | 2V @ 1mA | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V | 26.7 nC @ 5 V | 12 nC @ 5 V | 9.6 nC @ 5 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V | 2200 pF @ 25 V | 860 pF @ 25 V | 920 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 93W (Tc) | 115W (Tc) | 93W (Tc) | 111W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | DPAK | DPAK | D2PAK | DPAK |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-252-3, DPak (2 Leads + Tab), SC-63 |
