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| Part Number | PHD21N06LT,118 | PHB21N06LT,118 |
|---|---|---|
| Manufacturer | NXP USA Inc. | Nexperia USA Inc. |
| Product Status | Obsolete | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 10A, 10V | 70mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 5 V | 9.4 nC @ 5 V |
| Vgs (Max) | ±15V | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V | 650 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 56W (Tc) | 56W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | DPAK | D2PAK |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
