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| Part Number | PHD16N03T,118 | PHD16N03LT,118 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 13.1A (Tc) | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 13A, 10V | 67mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 10 V | 8.5 nC @ 10 V |
| Vgs (Max) | ±20V | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 30 V | 210 pF @ 30 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 32.6W (Tc) | 32.6W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | DPAK | DPAK |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
