PHD16N03LT,118
  • Share:

NXP USA Inc. PHD16N03LT,118

Manufacturer No:
PHD16N03LT,118
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PHD16N03LT,118 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 16A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:67mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 10 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:210 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):32.6W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
95

Please send RFQ , we will respond immediately.

Similar Products

Part Number PHD16N03LT,118 PHD36N03LT,118   PHD16N03T,118  
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 43.4A (Tc) 13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 67mOhm @ 16A, 10V 17mOhm @ 25A, 10V 100mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 250µA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V 18.5 nC @ 10 V 5.2 nC @ 10 V
Vgs (Max) ±15V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 30 V 690 pF @ 25 V 180 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 32.6W (Tc) 57.6W (Tc) 32.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IPP065N04NG
IPP065N04NG
Infineon Technologies
N-CHANNEL POWER MOSFET
SSM6J422TU,LXHF
SSM6J422TU,LXHF
Toshiba Semiconductor and Storage
SMOS P-CH VDSS=-20V, VGSS=+6/-8V
FDZ193P
FDZ193P
Fairchild Semiconductor
MOSFET P-CH 20V 3A 6WLCSP
FDMC007N08LCDC
FDMC007N08LCDC
onsemi
MOSFET N-CH 80V 64A 8PQFN
FDI33N25TU
FDI33N25TU
Fairchild Semiconductor
MOSFET N-CH 250V 33A I2PAK
IPS65R1K0CEAKMA2
IPS65R1K0CEAKMA2
Infineon Technologies
MOSFET N-CH 650V 7.2A TO251-3
IRF5305STRR
IRF5305STRR
Infineon Technologies
MOSFET P-CH 55V 31A D2PAK
IRF7466
IRF7466
Infineon Technologies
MOSFET N-CH 30V 11A 8SO
STSJ25NF3LL
STSJ25NF3LL
STMicroelectronics
MOSFET N-CH 30V 25A 8SOIC
SFH9240
SFH9240
onsemi
MOSFET P-CH 200V 11A TO3P
IRFH7882TRPBF
IRFH7882TRPBF
Infineon Technologies
MOSFET N-CH 80V 26A 8PQFN
R6504KND3TL1
R6504KND3TL1
Rohm Semiconductor
HIGH-SPEED SWITCHING, NCH 650V 4

Related Product By Brand

8MNANOD4-EVK
8MNANOD4-EVK
NXP USA Inc.
8MNANOD4-EVK
BLA6G1011LS-200RG11
BLA6G1011LS-200RG11
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT502 (
MSC8144TVT800A
MSC8144TVT800A
NXP USA Inc.
IC DSP QUAD 800MHZ 783FCBGA
LPC18S10FET100E
LPC18S10FET100E
NXP USA Inc.
IC MCU 32BIT ROMLESS 100TFBGA
SPC5607BF1VLL6
SPC5607BF1VLL6
NXP USA Inc.
IC MCU 32BIT 1.5MB FLASH 100LQFP
S912XDP512J1VAGR
S912XDP512J1VAGR
NXP USA Inc.
IC MCU 16BIT 512KB FLASH 144LQFP
MCHC705KJ1CPE
MCHC705KJ1CPE
NXP USA Inc.
IC MCU 8BIT 1.2KB OTP 16DIP
MCIMX280DVM4BR
MCIMX280DVM4BR
NXP USA Inc.
I.MX28 32-BIT MPU ARM926EJ-S CO
KXPC8240LVV200E
KXPC8240LVV200E
NXP USA Inc.
IC MPU MPC82XX 200MHZ 352TBGA
P1010NXN5KHB
P1010NXN5KHB
NXP USA Inc.
IC MPU Q OR IQ 1.0GHZ 425TEBGA
74AHCT374D118
74AHCT374D118
NXP USA Inc.
NOW NEXPERIA 74AHCT374D - BUS DR
MC13224VR2
MC13224VR2
NXP USA Inc.
IC RF TXRX+MCU 802.15.4 145TFLGA