PHB11N06LT,118
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NXP USA Inc. PHB11N06LT,118

Manufacturer No:
PHB11N06LT,118
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PHB11N06LT,118 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 10.3A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:130mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):33W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number PHB11N06LT,118 PHB21N06LT,118  
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 10.3A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 5.5A, 10V 70mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 5 V 9.4 nC @ 5 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V 650 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 33W (Tc) 56W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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