PHB110NQ08T,118
  • Share:

NXP USA Inc. PHB110NQ08T,118

Manufacturer No:
PHB110NQ08T,118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
PHB110NQ08T,118 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 75A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:113.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):230W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.05
418

Please send RFQ , we will respond immediately.

Similar Products

Part Number PHB110NQ08T,118 PHB160NQ08T,118   PHB110NQ08LT,118  
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 25A, 10V 5.6mOhm @ 25A, 10V 8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 113.1 nC @ 10 V 91 nC @ 10 V 127.3 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4860 pF @ 25 V 5585 pF @ 25 V 6631 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 230W (Tc) 300W (Tc) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

MSC015SMA070B
MSC015SMA070B
Microchip Technology
SICFET N-CH 700V 131A TO247-3
MCAC30N06Y-TP
MCAC30N06Y-TP
Micro Commercial Co
MOSFET N-CH 60V 30A DFN5060
NTTFS4C08NTAG
NTTFS4C08NTAG
onsemi
MOSFET N-CH 30V 9.3A 8WDFN
SPW17N80C3FKSA1
SPW17N80C3FKSA1
Infineon Technologies
MOSFET N-CH 800V 17A TO247-3
SI2333DDS-T1-BE3
SI2333DDS-T1-BE3
Vishay Siliconix
P-CHANNEL 12-V (D-S) MOSFET
STP105N3LL
STP105N3LL
STMicroelectronics
MOSFET N-CH 30V 80A TO220
LND150N3-G-P002
LND150N3-G-P002
Microchip Technology
MOSFET N-CH 500V 30MA TO92-3
FCPF260N60E-F154
FCPF260N60E-F154
onsemi
MOSFET N-CH 600V 15A TO220F-3
NTC080N120SC1
NTC080N120SC1
onsemi
SIC MOS WAFER SALES 80MOHM 1200V
YJG15N15B-F1-0100HF
YJG15N15B-F1-0100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 150V 15A PDFN5060-8L
FDB8444-F085
FDB8444-F085
onsemi
MOSFET N-CH 40V 70A TO263AB
TSM4N80CZ C0G
TSM4N80CZ C0G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 800V 4A TO220

Related Product By Brand

BAT54C/S501215
BAT54C/S501215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG6020AELR115
PMEG6020AELR115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BZX284-B10,115
BZX284-B10,115
NXP USA Inc.
DIODE ZENER 10V 400MW SOD110
LPC1758FBD80Y
LPC1758FBD80Y
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 80LQFP
MK20FX512VLQ12
MK20FX512VLQ12
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 144LQFP
S912ZVL12F0CLC
S912ZVL12F0CLC
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 32LQFP
MC68HC908SR12CFA
MC68HC908SR12CFA
NXP USA Inc.
IC MCU 8BIT 12KB FLASH 48LQFP
P2010NSN2KHC
P2010NSN2KHC
NXP USA Inc.
IC MPU Q OR IQ 1.2GHZ 689TEBGA
MC33889DEG
MC33889DEG
NXP USA Inc.
IC INTERFACE SPECIALIZED 28SOIC
74LV86D,118
74LV86D,118
NXP USA Inc.
IC GATE XOR 4CH 2-INP 14SO
BZX79-B51113
BZX79-B51113
NXP USA Inc.
NOW NEXPERIA BZX79-B51 - ZENER D
BGU8004X
BGU8004X
NXP USA Inc.
IC AMP GALI 1.559-1.61GHZ 6WLCSP