PHB110NQ06LT,118
  • Share:

NXP USA Inc. PHB110NQ06LT,118

Manufacturer No:
PHB110NQ06LT,118
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PHB110NQ06LT,118 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 75A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:3960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
276

Please send RFQ , we will respond immediately.

Similar Products

Part Number PHB110NQ06LT,118 PHB110NQ08LT,118  
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 75 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V 8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 5 V 127.3 nC @ 10 V
Vgs (Max) ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3960 pF @ 25 V 6631 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200W (Tc) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

PJC7400_R1_00001
PJC7400_R1_00001
Panjit International Inc.
SOT-323, MOSFET
STD1063T4
STD1063T4
onsemi
NFET DPAK SPCL 500V TR
IPSA70R360P7SAKMA1
IPSA70R360P7SAKMA1
Infineon Technologies
MOSFET N-CH 700V 12.5A TO251-3
APT47N60BC3G
APT47N60BC3G
Microchip Technology
MOSFET N-CH 600V 47A TO247
IXTH1N300P3HV
IXTH1N300P3HV
IXYS
MOSFET N-CH 3000V 1A TO247HV
SI7461DP-T1-E3
SI7461DP-T1-E3
Vishay Siliconix
MOSFET P-CH 60V 8.6A PPAK SO-8
FDG410NZ
FDG410NZ
Fairchild Semiconductor
MOSFET N-CH 20V 2.2A SC88
ATP602-TL-H
ATP602-TL-H
onsemi
MOSFET N-CH 600V 5A ATPAK
MCP87022T-U/MF
MCP87022T-U/MF
Microchip Technology
MOSFET N-CH 25V 100A 8PDFN
STFI9N60M2
STFI9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A I2PAKFP
SI4048DY-T1-GE3
SI4048DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 19.3A 8SO
NTMFS4C032NT3G
NTMFS4C032NT3G
onsemi
MOSFET N-CH 30V 13A/38A 5DFN

Related Product By Brand

TWR-AUDIO-SGTL
TWR-AUDIO-SGTL
NXP USA Inc.
TOWER SYSTEM KIT AUDIO
BAV170235
BAV170235
NXP USA Inc.
RECTIFIER DIODE, 2 ELEMENT, 0.21
BCX17/DG/B4215
BCX17/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
A2G35S160-01SR3
A2G35S160-01SR3
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
PHB11N06LT,118
PHB11N06LT,118
NXP USA Inc.
MOSFET N-CH 55V 10.3A D2PAK
PCK9447BD,157
PCK9447BD,157
NXP USA Inc.
IC CLK BUFFER 2:9 350MHZ 32LQFP
MKL27Z256VFT4
MKL27Z256VFT4
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 48QFN
MCL908QY2DWE
MCL908QY2DWE
NXP USA Inc.
IC MCU 8BIT 1.5KB FLASH 16SOIC
MPC857TZQ66B
MPC857TZQ66B
NXP USA Inc.
IC MPU MPC8XX 66MHZ 357BGA
74LVC14ADB653
74LVC14ADB653
NXP USA Inc.
INVERTER, LVC/LCX/Z SERIES
MC33FS6521NAE
MC33FS6521NAE
NXP USA Inc.
SYSTEM BASIS CHIP DCDC 2.2A VCO
RB521CS30L315
RB521CS30L315
NXP USA Inc.
100MA LOW VF MEGA SCHOTTKY BARRI