PDTD123EK,115
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NXP USA Inc. PDTD123EK,115

Manufacturer No:
PDTD123EK,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PDTD123EK,115 Datasheet
ECAD Model:
-
Description:
TRANS PREBIAS NPN 250MW SMT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SMT3; MPAK
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Similar Products

Part Number PDTD123EK,115 PDTD123TK,115   PDTD123YK,115   PDTD113EK,115  
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 2.2 kOhms 2.2 kOhms 1 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms - 10 kOhms 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA, 5V 100 @ 50mA, 5V 70 @ 50mA, 5V 33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA 300mV @ 2.5mA, 50mA 300mV @ 2.5mA, 50mA 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA
Frequency - Transition - - - -
Power - Max 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SMT3; MPAK SMT3; MPAK SMT3; MPAK SMT3; MPAK

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