NXP USA Inc.-PDTC323TK,115 - Transistors - Bipolar (BJT) - Single, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	15 V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	-
Power - Max:	250 mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SMT3; MPAK

NXP USA Inc. PDTC323TK,115