PDTC114YK,115
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NXP USA Inc. PDTC114YK,115

Manufacturer No:
PDTC114YK,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PDTC114YK,115 Datasheet
ECAD Model:
-
Description:
TRANS PREBIAS NPN 250MW SMT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SMT3; MPAK
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Similar Products

Part Number PDTC114YK,115 PDTC114YU,115   PDTC114EK,115   PDTC114TK,115   PDTC114YE,115  
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active Active Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased - NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA - 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V - 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms - 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms - - 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 5V 100 @ 5mA, 5V - 200 @ 1mA, 5V 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA - 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA 1µA - 1µA 1µA
Frequency - Transition - 230 MHz - - -
Power - Max 250 mW 200 mW - 250 mW 150 mW
Mounting Type Surface Mount Surface Mount - Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 - TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416
Supplier Device Package SMT3; MPAK SOT-323 - SMT3; MPAK SC-75

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