NXP USA Inc.-PDTB143EQA147 - Transistors - Bipolar (BJT) - Single, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	150 MHz
Power - Max:	325 mW
Mounting Type:	Surface Mount
Package / Case:	3-XDFN Exposed Pad
Supplier Device Package:	DFN1010D-3

NXP USA Inc. PDTB143EQA147