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Part Number | PDTA123JS,126 | PDTA123YS,126 | PDTA123ES,126 |
---|---|---|---|
Manufacturer | NXP USA Inc. | NXP USA Inc. | NXP USA Inc. |
Product Status | Obsolete | Obsolete | Obsolete |
Transistor Type | PNP - Pre-Biased | PNP - Pre-Biased | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100 mA | 100 mA | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V | 50 V |
Resistor - Base (R1) | 2.2 kOhms | 2.2 kOhms | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms | 10 kOhms | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V | 35 @ 5mA, 5V | 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA | 150mV @ 500µA, 10mA | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA | 1µA | 1µA |
Frequency - Transition | - | - | - |
Power - Max | 500 mW | 500 mW | 500 mW |
Mounting Type | Through Hole | Through Hole | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package | TO-92-3 | TO-92-3 | TO-92-3 |