NXP USA Inc.-PBSS8110S,126 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	PBSS8110S,126	PBSS9110S,126	PBSS8110AS,126
Manufacturer	NXP USA Inc.	NXP USA Inc.	NXP USA Inc.
Product Status	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	PNP	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	200mV @ 100mA, 1A	320mV @ 100mA, 1A	200mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 250mA, 10V	150 @ 500mA, 5V	150 @ 250mA, 10V
Power - Max	830 mW	830 mW	830 mW
Frequency - Transition	100MHz	100MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3

NXP USA Inc. PBSS8110S,126

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 250mA, 10V
Power - Max:	830 mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3