NXP USA Inc.-PBSS4350SPN,115 - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	2.7A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	340mV @ 270mA, 2.7A, 370mV @ 270mA, 2.7A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 1A, 2V / 180 @ 1A, 2V
Power - Max:	750mW
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

NXP USA Inc. PBSS4350SPN,115