Overview
The MRF8P29300HR6 is a high-performance RF power field effect transistor (FET) designed by NXP Semiconductors. This device is part of the N-Channel Enhancement-Mode Lateral MOSFET family and is optimized for use in high-power RF applications. It operates within the frequency range of 2700-2900 MHz, making it suitable for various wireless communication systems, including cellular base stations and other high-power RF amplifiers.
Key Specifications
| Parameter | Value |
|---|---|
| Frequency Range | 2700-2900 MHz |
| Peak Power | 320 Watts |
| Drain-Source Voltage (Vds) | 30 Vdc |
| Input Power (Pulsed) | Up to 55.4 dBm (347 W) at 3 dB input overdrive |
| Pulse Width | 300 μsec |
| Duty Cycle | 10% |
| Drain Efficiency | Up to 47% at 2900 MHz |
| Input Return Loss | -15 dB typical at 2900 MHz |
Key Features
- High peak power handling of up to 320 Watts
- Operates at a frequency range of 2700-2900 MHz
- Enhancement-mode lateral N-Channel MOSFET structure
- Capable of handling 10:1 VSWR (Voltage Standing Wave Ratio)
- High drain efficiency, up to 47% at 2900 MHz
- Compact test circuit design available
Applications
The MRF8P29300HR6 is primarily used in high-power RF applications, including:
- Cellular base stations
- Wireless communication systems
- RF amplifiers for various communication technologies
- High-power RF transmitters
Q & A
- What is the frequency range of the MRF8P29300HR6? The frequency range is 2700-2900 MHz.
- What is the peak power handling of the MRF8P29300HR6? The peak power handling is up to 320 Watts.
- What is the drain-source voltage (Vds) of the MRF8P29300HR6? The drain-source voltage is 30 Vdc.
- What is the pulse width and duty cycle for the pulsed input power? The pulse width is 300 μsec, and the duty cycle is 10%.
- What is the typical drain efficiency at 2900 MHz? The typical drain efficiency is up to 47% at 2900 MHz.
- Can the MRF8P29300HR6 handle high VSWR? Yes, it can handle up to 10:1 VSWR.
- What type of MOSFET is the MRF8P29300HR6? It is an N-Channel Enhancement-Mode Lateral MOSFET.
- What are the primary applications of the MRF8P29300HR6? The primary applications include cellular base stations, wireless communication systems, and high-power RF amplifiers.
- Where can I find detailed specifications and datasheets for the MRF8P29300HR6? Detailed specifications and datasheets can be found on the NXP Semiconductors website or through distributors like Mouser and Digi-Key.
- Is there a compact test circuit design available for the MRF8P29300HR6? Yes, a compact test circuit design is available for this device.
