NXP USA Inc.-J175,116 - Transistors - JFETs Product Specifications and Latest Quotes

FET Type:	P-Channel
Voltage - Breakdown (V(BR)GSS):	30 V
Drain to Source Voltage (Vdss):	30 V
Current - Drain (Idss) @ Vds (Vgs=0):	7 mA @ 15 V
Current Drain (Id) - Max:	-
Voltage - Cutoff (VGS off) @ Id:	3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds:	8pF @ 10V (VGS)
Resistance - RDS(On):	125 Ohms
Power - Max:	400 mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

NXP USA Inc. J175,116