J112,126
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NXP USA Inc. J112,126

Manufacturer No:
J112,126
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
J112,126 Datasheet
ECAD Model:
-
Description:
JFET N-CH 40V 400MW TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):40 V
Drain to Source Voltage (Vdss):40 V
Current - Drain (Idss) @ Vds (Vgs=0):5 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:6pF @ 10V (VGS)
Resistance - RDS(On):50 Ohms
Power - Max:400 mW
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number J112,126 J113,126   J110,126   J111,126  
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 40 V 40 V 25 V 40 V
Drain to Source Voltage (Vdss) 40 V 40 V 25 V 40 V
Current - Drain (Idss) @ Vds (Vgs=0) 5 mA @ 15 V 2 mA @ 15 V 10 mA @ 5 V 20 mA @ 15 V
Current Drain (Id) - Max - - - -
Voltage - Cutoff (VGS off) @ Id 1 V @ 1 µA 500 mV @ 1 µA 4 V @ 1 µA 10 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 6pF @ 10V (VGS) 6pF @ 10V (VGS) 30pF @ 0V 6pF @ 10V (VGS)
Resistance - RDS(On) 50 Ohms 100 Ohms 18 Ohms 30 Ohms
Power - Max 400 mW 400 mW 400 mW 400 mW
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

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