BYV25X-600,127
  • Share:

NXP USA Inc. BYV25X-600,127

Manufacturer No:
BYV25X-600,127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
BYV25X-600,127 Datasheet
ECAD Model:
-
Description:
NOW WEEN - BYV25X-600 - ULTRAFAS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:TO-220F
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.38
2,147

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYV25X-600,127 BYV29X-600,127   BYV25F-600,127   BYV25FX-600,127   BYV25G-600,127  
Manufacturer NXP USA Inc. WeEn Semiconductors WeEn Semiconductors NXP USA Inc. WeEn Semiconductors
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard -
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V -
Current - Average Rectified (Io) 5A 9A 5A 5A -
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 5 A 1.26 V @ 8 A 1.9 V @ 5 A 1.9 V @ 5 A -
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) 60 ns 60 ns 35 ns 35 ns -
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V -
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole -
Package / Case TO-220-2 Full Pack TO-220-2 Full Pack, Isolated Tab TO-220-2 TO-220-2 Full Pack -
Supplier Device Package TO-220F TO-220FP TO-220AC TO-220F -
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) -

Related Product By Categories

MBRP745TU
MBRP745TU
Fairchild Semiconductor
RECTIFIER DIODE
IDDD12G65C6XTMA1
IDDD12G65C6XTMA1
Infineon Technologies
SIC DIODES
STPS30M60SG-TR
STPS30M60SG-TR
STMicroelectronics
DIODE SCHOTTKY 60V 30A D2PAK
US1DH
US1DH
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
RS2G-M3/5BT
RS2G-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1.5A DO214AA
BAY73_T50R
BAY73_T50R
onsemi
DIODE GEN PURP 125V 500MA DO35
FFPF05U120STTU
FFPF05U120STTU
onsemi
DIODE GEN PURP 1.2KV 5A TO220F
STPS1150M
STPS1150M
STMicroelectronics
DIODE SCHOTTKY 150V 1A STMITE
1N4002GPE-E3/91
1N4002GPE-E3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
SR209 R0G
SR209 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 2A DO204AC
FR152-AP
FR152-AP
Micro Commercial Co
DIODE GPP FAST 1.5A DO-15
GS1B-AU_R1_000A1
GS1B-AU_R1_000A1
Panjit International Inc.
SMA, GENERAL

Related Product By Brand

BAV199/ZLR
BAV199/ZLR
NXP USA Inc.
DIODE ARRAY GEN PURP 75V SOT23
PMZB420UN
PMZB420UN
NXP USA Inc.
SMALL SIGNAL FET
BUK7526-100B,127
BUK7526-100B,127
NXP USA Inc.
MOSFET N-CH 100V 49A TO220AB
MKE06Z128VLK4
MKE06Z128VLK4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 80LQFP
LS1012ASN7EKB
LS1012ASN7EKB
NXP USA Inc.
LS1012A ST 600MHZ RV2
KMPC8323ZQAFDC
KMPC8323ZQAFDC
NXP USA Inc.
IC MPU MPC83XX 333MHZ 516BGA
SC18IS602IPW,128
SC18IS602IPW,128
NXP USA Inc.
IC BRIDGE SPI/I2C 16-TSSOP
PCA82C251T/YM,118
PCA82C251T/YM,118
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
74HC7541N,112
74HC7541N,112
NXP USA Inc.
IC BUFFER NON-INVERT 6V 20DIP
MC33HB2001EKR2
MC33HB2001EKR2
NXP USA Inc.
IC HALF-BRIDGE DRIVER SPI 32SOIC
BGU8051,118
BGU8051,118
NXP USA Inc.
IC AMP GSM 300MHZ-1.5GHZ 8HWSON
MPXM2202AS
MPXM2202AS
NXP USA Inc.
SENS PRESSURE 29 PSI MAX MPAK