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Part Number | BYR29-600,127 | BYR29X-600,127 | BYR29-800,127 |
---|---|---|---|
Manufacturer | NXP USA Inc. | NXP Semiconductors | WeEn Semiconductors |
Product Status | Active | Active | Active |
Diode Type | Standard | Standard | Standard |
Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | 800 V |
Current - Average Rectified (Io) | 8A | 8A | 8A |
Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A | 1.7 V @ 8 A | 1.5 V @ 8 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75 ns | 75 ns | 75 ns |
Current - Reverse Leakage @ Vr | 10 µA @ 600 V | 10 µA @ 600 V | 10 µA @ 800 V |
Capacitance @ Vr, F | - | - | - |
Mounting Type | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-2 | TO-220-2 Full Pack | TO-220-2 |
Supplier Device Package | TO-220AC | TO-220F | TO-220AC |
Operating Temperature - Junction | 150°C (Max) | 150°C (Max) | 150°C (Max) |