BYC5X-600,127
  • Share:

NXP USA Inc. BYC5X-600,127

Manufacturer No:
BYC5X-600,127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
BYC5X-600,127 Datasheet
ECAD Model:
-
Description:
NOW WEEN - BYC5X-600 - HYPERFAST
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):500 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:TO-220F
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.48
863

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC5X-600,127 BYC8X-600,127   BYC5X-600P127   BYC15X-600,127   BYC5-600,127   BYC58X-600,127  
Manufacturer NXP USA Inc. WeEn Semiconductors NXP USA Inc. WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active Active Active
Diode Type Standard Standard - Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 500 V 600 V - 500 V 500 V 600 V
Current - Average Rectified (Io) 5A 8A - 15A 5A 8A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 5 A 2.9 V @ 8 A - 2.9 V @ 15 A 2.9 V @ 5 A 3.2 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) - Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 52 ns - 55 ns 50 ns 12.5 ns
Current - Reverse Leakage @ Vr 100 µA @ 600 V 150 µA @ 600 V - 200 µA @ 600 V 100 µA @ 600 V 150 µA @ 600 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole - Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack TO-220-2 Full Pack, Isolated Tab - TO-220-2 Full Pack, Isolated Tab TO-220-2 TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220F TO-220FP - TO-220FP TO-220AC TO-220FP
Operating Temperature - Junction 150°C (Max) 150°C (Max) - 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAV116WS-7
BAV116WS-7
Diodes Incorporated
DIODE GEN PURP 85V 215MA SOD323
US3A
US3A
Diotec Semiconductor
DIODE UFR SMC 50V 3A
BAV20W-E3-18
BAV20W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 250MA SOD123
SB340_R2_00001
SB340_R2_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
HER603GP-TP
HER603GP-TP
Micro Commercial Co
DIODE GPP HE 6A R-6
VS-16FR100
VS-16FR100
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 16A DO203AA
JANTXV1N5615US
JANTXV1N5615US
Microchip Technology
DIODE GEN PURP 200V 1A D-5A
UES1101SM/TR
UES1101SM/TR
Microchip Technology
RECTIFIER UFR,FRR
120NQ035-1
120NQ035-1
SMC Diode Solutions
DIODE SCHOTTKY 35V 120A PRM1-1
MA2Q73500L
MA2Q73500L
Panasonic Electronic Components
DIODE SCHOTTKY 30V 1A NMINIP2
RGP02-12EHE3/73
RGP02-12EHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 500MA DO204
CDBF0230L-HF
CDBF0230L-HF
Comchip Technology
DIODE SCHOTTKY 30V 200MA 1005

Related Product By Brand

S32R372RRSEVB
S32R372RRSEVB
NXP USA Inc.
S32R372 EVAL BRD
BFU520WF
BFU520WF
NXP USA Inc.
RF TRANS NPN 12V 10GHZ SOT323-3
MRF6S19100NR1
MRF6S19100NR1
NXP USA Inc.
FET RF 68V 1.99GHZ TO270-4
PSMN011-30YL,115
PSMN011-30YL,115
NXP USA Inc.
MOSFET N-CH 30V 51A LFPAK56
PCK12429A,112
PCK12429A,112
NXP USA Inc.
IC CLOCK GENERATOR PECL 28PLCC
DSP56311VL150B1
DSP56311VL150B1
NXP USA Inc.
IC DSP 24BIT 150MHZ 196-MAPBGA
MC908GR60AMFUE
MC908GR60AMFUE
NXP USA Inc.
IC MCU 8BIT 60KB FLASH 64QFP
MPC8572ECVTARLB
MPC8572ECVTARLB
NXP USA Inc.
IC MPU MPC85XX 1.067GHZ 1023BGA
SSTUH32865ET/G,518
SSTUH32865ET/G,518
NXP USA Inc.
IC BUFFER 1.8V 28BIT SOT802-1
MC34PF1510A2EPR2
MC34PF1510A2EPR2
NXP USA Inc.
PF1510
74AXP1T34GN125
74AXP1T34GN125
NXP USA Inc.
NOW NEXPERIA 74AXP1T34GN - BUFFE
NCF29A2VHN/0500IJ
NCF29A2VHN/0500IJ
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 32HVQFN