BYC10D-600,127
  • Share:

NXP USA Inc. BYC10D-600,127

Manufacturer No:
BYC10D-600,127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
BYC10D-600,127 Datasheet
ECAD Model:
-
Description:
NOW WEEN - BYC10D-600 - HYPERFAS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):500 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:2.5 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):18 ns
Current - Reverse Leakage @ Vr:200 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.40
192

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC10D-600,127 BYC10DX-600,127   BYC10X-600,127   BYC10-600,127  
Manufacturer NXP USA Inc. WeEn Semiconductors NXP USA Inc. WeEn Semiconductors
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 500 V 500 V 500 V 500 V
Current - Average Rectified (Io) 10A 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 2.5 V @ 10 A 2.5 V @ 10 A 2.9 V @ 10 A 2.9 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 18 ns 18 ns 55 ns 55 ns
Current - Reverse Leakage @ Vr 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack TO-220-2
Supplier Device Package TO-220AC TO-220FP TO-220F TO-220AC
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

R5001415XXZT
R5001415XXZT
Powerex Inc.
RECTIFIER 1400V 150A DO-8 FOR
NTE5815
NTE5815
NTE Electronics, Inc
R-600PRV 6A
NRVTS245ESFT1G
NRVTS245ESFT1G
onsemi
DIODE SCHOTTKY 45V 2A SOD123FL
STTH2L06UFY
STTH2L06UFY
STMicroelectronics
DIODE GEN PURP 600V 2A SMBFLAT
SD540S_L2_00001
SD540S_L2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
12TQ150S
12TQ150S
SMC Diode Solutions
DIODE SCHOTTKY 150V 15A D2PAK
VS-175BGQ045HF4
VS-175BGQ045HF4
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 175A 45V POWERTAB
GR3M-F1-0000
GR3M-F1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 3A DO214AB
G3S06520H
G3S06520H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
GP30DHE3/54
GP30DHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO201AD
MUR360S R7G
MUR360S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
S1BLHMTG
S1BLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA

Related Product By Brand

MRF5S21130HR3
MRF5S21130HR3
NXP USA Inc.
FET RF 65V 2.17GHZ NI-880
NX3008PBKT,115
NX3008PBKT,115
NXP USA Inc.
MOSFET P-CH 30V 200MA SC75
MKM35Z256VLQ7
MKM35Z256VLQ7
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 144LQFP
SPC5643LFK0MLQ1
SPC5643LFK0MLQ1
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 144LQFP
MPC8250AZUPIBC557
MPC8250AZUPIBC557
NXP USA Inc.
POWERQUICC II RISC MPU 32-BIT
KMPC8555EPXAPF
KMPC8555EPXAPF
NXP USA Inc.
IC MPU MPC85XX 833MHZ 783FCBGA
MPC8547VUAUJ
MPC8547VUAUJ
NXP USA Inc.
IC MPU MPC85XX 1.333GHZ 783BGA
74ALVCH16540DL,112
74ALVCH16540DL,112
NXP USA Inc.
IC BUFFER INVERT 3.6V 48SSOP
TEA1721FT/N1,118
TEA1721FT/N1,118
NXP USA Inc.
IC OFFLINE SWITCH FLYBACK 7SOIC
MC33PF8100EQESR2
MC33PF8100EQESR2
NXP USA Inc.
POWER MANAGEMENT IC I.MX8 PRE-PR
LD6816CX4/23H,315
LD6816CX4/23H,315
NXP USA Inc.
IC REG LINEAR 2.3V 150MA 4WLCSP
TEF6688HN/V102K
TEF6688HN/V102K
NXP USA Inc.
RF RCVR AM/FM 32HVQFN