BY329X-1500,127
  • Share:

NXP USA Inc. BY329X-1500,127

Manufacturer No:
BY329X-1500,127
Manufacturer:
NXP USA Inc.
Package:
Tube
Datasheet:
BY329X-1500,127 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.5KV 6A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1500 V
Current - Average Rectified (Io):6A (DC)
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 6.5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):230 ns
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:TO-220FP
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
562

Please send RFQ , we will respond immediately.

Similar Products

Part Number BY329X-1500,127 BY329X-1500S,127   BY359X-1500,127   BY329X-1200,127  
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1500 V 1500 V 1500 V 1200 V
Current - Average Rectified (Io) 6A (DC) 6A (DC) 10A (DC) 8A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 6.5 A 1.6 V @ 6.5 A 1.8 V @ 20 A 1.85 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 230 ns 160 ns 600 ns 145 ns
Current - Reverse Leakage @ Vr - 250 µA @ 1300 V 100 µA @ 1300 V 1 mA @ 1000 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack TO-220-2 Full Pack TO-220-2 Full Pack TO-220-2 Full Pack
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

RB751V-40_R1_00001
RB751V-40_R1_00001
Panjit International Inc.
SOD-323, SKY
S2G-E3/52T
S2G-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1.5A DO214AA
TPMR10J S1G
TPMR10J S1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO277A
STPSC10H065G-TR
STPSC10H065G-TR
STMicroelectronics
DIODE SILICON 650V 10A D2PAK
SS36LW RVG
SS36LW RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SOD123W
SDURD1060CT
SDURD1060CT
SMC Diode Solutions
DIODE GEN PURP 600V DPAK
RS1KFP
RS1KFP
onsemi
DIODE GP 800V 1.2A SOD123HE
JANTX1N4150UR-1
JANTX1N4150UR-1
Microchip Technology
DIODE GEN PURP 50V 200MA DO213AA
JAN1N5415/TR
JAN1N5415/TR
Microchip Technology
RECTIFIER UFR,FRR
UB8CT-E3/8W
UB8CT-E3/8W
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 8A TO263AB
1N4006GP-M3/54
1N4006GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO204AL
SRAF1090 C0G
SRAF1090 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 10A ITO220AC

Related Product By Brand

DEMO9RS08KA2
DEMO9RS08KA2
NXP USA Inc.
MC9RS08KA2 EVAL BRD
S32K3X4EVB-Q172
S32K3X4EVB-Q172
NXP USA Inc.
S32K344 172 MAXQFP EVAL BOARD
S912XHY128F0VLLR
S912XHY128F0VLLR
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 100LQFP
MC9S12DJ64VPVE
MC9S12DJ64VPVE
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 112LQFP
MPC8541EVTAKE
MPC8541EVTAKE
NXP USA Inc.
IC MPU MPC85XX 600MHZ 783FCBGA
PCA9555BSHP
PCA9555BSHP
NXP USA Inc.
IC I/O EXPANDER I2C 16B 24HVQFN
MPR111EKR2
MPR111EKR2
NXP USA Inc.
IC SENS PROXIMITY ANLG 54-SOIC
MCZ33989EGR2
MCZ33989EGR2
NXP USA Inc.
IC INTERFACE SPECIALIZED 28SOIC
74ABT640D,602
74ABT640D,602
NXP USA Inc.
IC TRANSCEIVER INVERT 5.5V 20SO
74LVC38AD,118
74LVC38AD,118
NXP USA Inc.
IC GATE NAND OD 4CH 2-INP 14SO
MC33FS4502LAE
MC33FS4502LAE
NXP USA Inc.
SYSTEM BASIS CHIP LINEAR 0.5A V
PDTA123YMB315
PDTA123YMB315
NXP USA Inc.
NOW NEXPERIA PDTA123YMB - SMALL