NXP USA Inc.-BUT11APX-1200,127 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	6 A
Voltage - Collector Emitter Breakdown (Max):	550 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 400mA, 2A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 500mA, 5V
Power - Max:	32 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	TO-220F

NXP USA Inc. BUT11APX-1200,127