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BUK9Y9R9-80E,115
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NXP USA Inc. BUK9Y9R9-80E,115

Manufacturer No:
BUK9Y9R9-80E,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BUK9Y9R9-80E,115 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V LFPAK56 PWR-SO8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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In Stock

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515

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