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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
BUK9Y9R9-80E,115
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NXP USA Inc. BUK9Y9R9-80E,115
Manufacturer No:
BUK9Y9R9-80E,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BUK9Y9R9-80E,115 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V LFPAK56 PWR-SO8
Delivery:
Payment:
Product Attributes
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8
Package / Case:
SC-100, SOT-669
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UnitPrice:
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Quantity:
515
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