NXP USA Inc.-BUK9E6R1-100E,127 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	5.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	133 nC @ 5 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	17460 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	349W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I2PAK
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

NXP USA Inc. BUK9E6R1-100E,127