BUK9E3R2-40E,127
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NXP USA Inc. BUK9E3R2-40E,127

Manufacturer No:
BUK9E3R2-40E,127
Manufacturer:
NXP USA Inc.
Package:
Tube
Datasheet:
BUK9E3R2-40E,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 100A I2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:69.5 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:9150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):234W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number BUK9E3R2-40E,127 BUK9E3R2-40B,127  
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 25A, 10V 2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 69.5 nC @ 5 V 94 nC @ 5 V
Vgs (Max) ±10V ±15V
Input Capacitance (Ciss) (Max) @ Vds 9150 pF @ 25 V 10502 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 234W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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