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| Part Number | BUK9E1R9-40E,127 | BUK9E1R8-40E,127 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Product Status | Obsolete | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tj) | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 5V, 10V |
| Rds On (Max) @ Id, Vgs | - | 1.7mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | - | 2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - | 120 nC @ 5 V |
| Vgs (Max) | - | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | - | 16400 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | - | 349W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | I2PAK | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
