BUK9618-55A,118
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NXP USA Inc. BUK9618-55A,118

Manufacturer No:
BUK9618-55A,118
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BUK9618-55A,118 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 61A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:2210 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number BUK9618-55A,118 BUK9628-55A,118   BUK9608-55A,118   BUK9610-55A,118   BUK9611-55A,118   BUK9614-55A,118   BUK9616-55A,118  
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP Semiconductors NXP USA Inc. NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 61A (Tc) 42A (Tc) 75A (Tc) 75A (Tc) 75A (Tc) 73A (Tc) 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 25A, 10V 25mOhm @ 15A, 10V 7.5mOhm @ 25A, 10V 9mOhm @ 25A, 10V 10mOhm @ 25A, 10V 13mOhm @ 25A, 10V 15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 5 V - 92 nC @ 5 V 68 nC @ 5 V - - -
Vgs (Max) ±15V ±10V ±15V ±15V ±10V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 2210 pF @ 25 V 1725 pF @ 25 V 6021 pF @ 25 V 4307 pF @ 25 V 4230 pF @ 25 V 3307 pF @ 25 V 3085 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 136W (Tc) 99W (Tc) 253W (Tc) 200W (Tc) 166W (Tc) 149W (Tc) 138W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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