BUK952R8-60E,127
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NXP USA Inc. BUK952R8-60E,127

Manufacturer No:
BUK952R8-60E,127
Manufacturer:
NXP USA Inc.
Package:
Tube
Datasheet:
BUK952R8-60E,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 120A TO220AB
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:17450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):349W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number BUK952R8-60E,127 BUK954R8-60E,127  
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V 4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 5 V 65 nC @ 5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 17450 pF @ 25 V 9710 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 349W (Tc) 234W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

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