NXP USA Inc.-BUK9107-55ATE,118 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	6.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	108 nC @ 5 V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	5836 pF @ 25 V
FET Feature:	Temperature Sensing Diode
Power Dissipation (Max):	272W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-426
Package / Case:	TO-263-5, D²Pak (4 Leads + Tab), TO-263BB

NXP USA Inc. BUK9107-55ATE,118