BUK7Y25-40B/C,115
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NXP USA Inc. BUK7Y25-40B/C,115

Manufacturer No:
BUK7Y25-40B/C,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BUK7Y25-40B/C,115 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 35.3A LFPAK56
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:35.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:12.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:693 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):59.4W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number BUK7Y25-40B/C,115 BUK7Y25-40B/C3115  
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 40 V -
Current - Continuous Drain (Id) @ 25°C 35.3A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 25mOhm @ 20A, 10V -
Vgs(th) (Max) @ Id 4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 12.1 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 693 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 59.4W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package LFPAK56, Power-SO8 -
Package / Case SC-100, SOT-669 -

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