NXP USA Inc.-BUK7E13-60E,127 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	58A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	22.9 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1730 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	96W (Ta)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I2PAK
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

NXP USA Inc. BUK7E13-60E,127