NXP USA Inc.-BUK7880-55,135 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	80mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	500 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1.8W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-73
Package / Case:	TO-261-4, TO-261AA

NXP USA Inc. BUK7880-55,135