BUK78150-55A,115
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NXP USA Inc. BUK78150-55A,115

Manufacturer No:
BUK78150-55A,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BUK78150-55A,115 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 5.5A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-73
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number BUK78150-55A,115 BUK78150-55A,135  
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 5A, 10V 150mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 230 pF @ 25 V 230 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 8W (Tc) 8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-73 SC-73
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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