BUK751R8-40E127
  • Share:

NXP USA Inc. BUK751R8-40E127

Manufacturer No:
BUK751R8-40E127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
BUK751R8-40E127 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11340 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):349W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$0.85
1,034

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUK751R8-40E127 BUK751R8-40E,127  
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 25A, 10V 1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V 145 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11340 pF @ 25 V 11340 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 349W (Tc) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

Related Product By Categories

BUK7C06-40AITE,118
BUK7C06-40AITE,118
NXP USA Inc.
MOSFET N-CH 40V 75A D2PAK
IRF100B202
IRF100B202
Infineon Technologies
MOSFET N-CH 100V 97A TO220AB
SIS413DN-T1-GE3
SIS413DN-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 18A PPAK 1212-8
SIS443DN-T1-GE3
SIS443DN-T1-GE3
Vishay Siliconix
MOSFET P-CH 40V 35A PPAK 1212-8
IXFH42N60P3
IXFH42N60P3
IXYS
MOSFET N-CH 600V 42A TO247AD
RM8N650HD
RM8N650HD
Rectron USA
MOSFET N-CHANNEL 650V 8A TO263-2
C3M0032120J1
C3M0032120J1
Wolfspeed, Inc.
1200V 32MOHM SIC MOSFET
IPP08CN10L G
IPP08CN10L G
Infineon Technologies
MOSFET N-CH 100V 98A TO220-3
IRF6709S2TRPBF
IRF6709S2TRPBF
Infineon Technologies
MOSFET N-CH 25V 12A DIRECTFET
SI7405BDN-T1-E3
SI7405BDN-T1-E3
Vishay Siliconix
MOSFET P-CH 12V 16A PPAK 1212-8
2N6788
2N6788
Microsemi Corporation
MOSFET N-CH 100V 6A TO39
DMG3N60SCT
DMG3N60SCT
Diodes Incorporated
MOSFET N-CH 600V 3.3A TO220AB

Related Product By Brand

TWR-KW24D512
TWR-KW24D512
NXP USA Inc.
TOWER SYSTEM KIT
MRF373ALR5
MRF373ALR5
NXP USA Inc.
FET RF 70V 860MHZ NI-360
MC68332ACAG25
MC68332ACAG25
NXP USA Inc.
IC MCU 32BIT ROMLESS 144LQFP
P87C54X2FA,512
P87C54X2FA,512
NXP USA Inc.
IC MCU 8BIT 16KB OTP 44PLCC
PK20N512VLK100
PK20N512VLK100
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 80FQFP
MPC8547EPXAUJB
MPC8547EPXAUJB
NXP USA Inc.
IC MPU MPC85XX 1.333GHZ 783BGA
TJA1029T/20/1J
TJA1029T/20/1J
NXP USA Inc.
IC TRANSCEIVER 1/1 8SO
74LVC1G14GV-Q100125
74LVC1G14GV-Q100125
NXP USA Inc.
INVERTER, LVC/LCX/Z SERIES
N74F166D,602
N74F166D,602
NXP USA Inc.
IC SHIFT REGISTER 8BIT 16-SOIC
74AUP2G157GD,125
74AUP2G157GD,125
NXP USA Inc.
MULTIPLEXER, AUP/ULP/V SERIES, 1
NVT2008PW,118
NVT2008PW,118
NXP USA Inc.
IC TRNSLTR BIDIRECTIONAL 20TSSOP
PCA9633PW,118
PCA9633PW,118
NXP USA Inc.
IC LED DRVR PS PWM 25MA 16TSSOP