BUK7516-55A,127
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NXP USA Inc. BUK7516-55A,127

Manufacturer No:
BUK7516-55A,127
Manufacturer:
NXP USA Inc.
Package:
Tube
Datasheet:
BUK7516-55A,127 Datasheet
ECAD Model:
-
Description:
PFET, 65.7A I(D), 55V, 0.016OHM,
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:65.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2245 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):138W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Part Number BUK7516-55A,127 BUK7506-55A,127   BUK7511-55A,127   BUK7514-55A,127  
Manufacturer NXP USA Inc. NXP Semiconductors NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 65.7A (Tc) 75A (Tc) 75A (Tc) 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 25A, 10V 6.3mOhm @ 25A, 10V 11mOhm @ 25A, 10V 14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - - -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2245 pF @ 25 V 6000 pF @ 25 V 3093 pF @ 25 V 2464 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 138W (Tc) 300W (Tc) 166W (Tc) 166W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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