BUK6E2R0-30C127
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NXP USA Inc. BUK6E2R0-30C127

Manufacturer No:
BUK6E2R0-30C127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
BUK6E2R0-30C127 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:229 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:14964 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):306W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number BUK6E2R0-30C127 BUK6E2R0-30C,127  
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 25A, 10V 2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 229 nC @ 10 V 229 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 14964 pF @ 25 V 14964 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 306W (Tc) 306W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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