NXP USA Inc.-BUK662R7-55C,118 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	258 nC @ 10 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	15300 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	306W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NXP USA Inc. BUK662R7-55C,118