BUK653R4-40C,127
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NXP USA Inc. BUK653R4-40C,127

Manufacturer No:
BUK653R4-40C,127
Manufacturer:
NXP USA Inc.
Package:
Tube
Datasheet:
BUK653R4-40C,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 100A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:125 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:8020 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):204W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number BUK653R4-40C,127 BUK6E3R4-40C,127  
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 25A, 10V 3.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V 125 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 8020 pF @ 25 V 8020 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 204W (Tc) 204W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB I2PAK
Package / Case TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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