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| Part Number | BUK652R3-40C,127 | BUK6E2R3-40C,127 | BUK652R6-40C,127 |
|---|---|---|---|
| Manufacturer | NXP USA Inc. | NXP Semiconductors | NXP USA Inc. |
| Product Status | Obsolete | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | 120A (Tc) | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 25A, 10V | 2.3mOhm @ 25A, 10V | 2.7mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA | 2.8V @ 1mA | 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | 260 nC @ 10 V | 199 nC @ 10 V |
| Vgs (Max) | ±16V | ±16V | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 15100 pF @ 25 V | 15100 pF @ 25 V | 11334 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 306W (Tc) | 306W (Tc) | 263W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220AB | I2PAK | TO-220AB |
| Package / Case | TO-220-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-220-3 |
