BUK652R1-30C,127
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NXP USA Inc. BUK652R1-30C,127

Manufacturer No:
BUK652R1-30C,127
Manufacturer:
NXP USA Inc.
Package:
Tube
Datasheet:
BUK652R1-30C,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 120A TO220AB
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:168 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:10918 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number BUK652R1-30C,127 BUK652R7-30C,127   BUK652R0-30C,127  
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 100A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 10V 3.3mOhm @ 25A, 10V 2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.8V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 168 nC @ 10 V 114 nC @ 10 V 229 nC @ 10 V
Vgs (Max) ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 10918 pF @ 25 V 6960 pF @ 25 V 14964 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 263W (Tc) 204W (Tc) 306W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3

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