BUK652R1-30C,127
  • Share:

NXP USA Inc. BUK652R1-30C,127

Manufacturer No:
BUK652R1-30C,127
Manufacturer:
NXP USA Inc.
Package:
Tube
Datasheet:
BUK652R1-30C,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 120A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:168 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:10918 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$0.95
978

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUK652R1-30C,127 BUK652R7-30C,127   BUK652R0-30C,127  
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 100A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 10V 3.3mOhm @ 25A, 10V 2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.8V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 168 nC @ 10 V 114 nC @ 10 V 229 nC @ 10 V
Vgs (Max) ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 10918 pF @ 25 V 6960 pF @ 25 V 14964 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 263W (Tc) 204W (Tc) 306W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

AOSS21115C
AOSS21115C
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V 4.5A SOT23-3
SI2304BDS-T1-GE3
SI2304BDS-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 2.6A SOT23-3
CSD18513Q5AT
CSD18513Q5AT
Texas Instruments
MOSFET N-CH 40V 124A 8VSON
IPG20N06S2L-35AATMA1
IPG20N06S2L-35AATMA1
Infineon Technologies
N-CHANNEL POWER MOSFET
NVMFS6H864NLT1G
NVMFS6H864NLT1G
onsemi
MOSFET N-CH 80V 7A/22A 5DFN
IPP034NE7N3GXKSA1
IPP034NE7N3GXKSA1
Infineon Technologies
MOSFET N-CH 75V 100A TO220-3
APT60M75JLL
APT60M75JLL
Microchip Technology
MOSFET N-CH 600V 58A ISOTOP
IRF624STRL
IRF624STRL
Vishay Siliconix
MOSFET N-CH 250V 4.4A D2PAK
IXFT9N80Q
IXFT9N80Q
IXYS
MOSFET N-CH 800V 9A TO268
AUIRF1010EZSTRL
AUIRF1010EZSTRL
Infineon Technologies
MOSFET N-CH 60V 75A D2PAK
SIR184LDP-T1-RE3
SIR184LDP-T1-RE3
Vishay Siliconix
N-CHANNEL 60 V (D-S) MOSFET POWE
RP1E125XNTR
RP1E125XNTR
Rohm Semiconductor
MOSFET N-CH 30V 12.5A MPT6

Related Product By Brand

TWR-12311-KIT-NA
TWR-12311-KIT-NA
NXP USA Inc.
TOWER KIT FOR NA
MM912I637AV1EP-NXP
MM912I637AV1EP-NXP
NXP USA Inc.
BATTERY SENSOR, LIN, 96KB FLASH,
FS32K142HAT0MLHT
FS32K142HAT0MLHT
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 64LQFP
MK60DN512VMC10R
MK60DN512VMC10R
NXP USA Inc.
IC MCU 32B 512KB FLASH 121MAPBGA
SPC5643LFK0MLL6R
SPC5643LFK0MLL6R
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 100LQFP
SPC5747GK1MKU6
SPC5747GK1MKU6
NXP USA Inc.
IC MCU 32BIT 4MB FLASH 176LQFP
S912XDQ256F1MAG
S912XDQ256F1MAG
NXP USA Inc.
IC MCU 16BIT 256KB FLASH 144LQFP
MIMXRT1062DVJ6A
MIMXRT1062DVJ6A
NXP USA Inc.
IC MCU 32BIT EXT MEM 196MAPBGA
74AUP1G32GW-Q100125
74AUP1G32GW-Q100125
NXP USA Inc.
IC GATE OR 1CH 2-INP 5TSSOP
MC33PT2001MAER2
MC33PT2001MAER2
NXP USA Inc.
SOLENOID CONTROLLER 6 64LQFP
LD6806TD/25H
LD6806TD/25H
NXP USA Inc.
IC REG LINEAR FIXED LDO REG
NE1618DS,118
NE1618DS,118
NXP USA Inc.
SENSOR DIGITAL 0C-120C 16SSOP