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| Part Number | BUK652R0-30C,127 | BUK652R1-30C,127 | BUK652R7-30C,127 | BUK6E2R0-30C,127 |
|---|---|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. | NXP USA Inc. | Nexperia USA Inc. |
| Product Status | Obsolete | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | 120A (Tc) | 100A (Tc) | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 10V |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 25A, 10V | 2.4mOhm @ 25A, 10V | 3.3mOhm @ 25A, 10V | 2.2mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA | 2.8V @ 1mA | 2.8V @ 1mA | 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 229 nC @ 10 V | 168 nC @ 10 V | 114 nC @ 10 V | 229 nC @ 10 V |
| Vgs (Max) | ±16V | ±16V | ±16V | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 14964 pF @ 25 V | 10918 pF @ 25 V | 6960 pF @ 25 V | 14964 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 306W (Tc) | 263W (Tc) | 204W (Tc) | 306W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | I2PAK |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
