BUK6209-30C,118
  • Share:

NXP USA Inc. BUK6209-30C,118

Manufacturer No:
BUK6209-30C,118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
BUK6209-30C,118 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 50A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:9.8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:30.5 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1760 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):80W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.21
639

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUK6209-30C,118 BUK6207-30C,118  
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Ta) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.8mOhm @ 12A, 10V 5.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 30.5 nC @ 10 V 54.8 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1760 pF @ 25 V 3470 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 80W (Ta) 128W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SI4058DY-T1-GE3
SI4058DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 10.3A 8SOIC
DMN2040UVT-7
DMN2040UVT-7
Diodes Incorporated
MOSFET N-CH 20V 6.7A TSOT26 T&R
SIA110DJ-T1-GE3
SIA110DJ-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 5.4A/12A PPAK
IRF9640LPBF
IRF9640LPBF
Vishay Siliconix
MOSFET P-CH 200V 11A I2PAK
BUK9524-55A,127
BUK9524-55A,127
NXP USA Inc.
MOSFET N-CH 55V 46A TO220AB
IRL510L
IRL510L
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO262-3
IRLL110PBF
IRLL110PBF
Vishay Siliconix
MOSFET N-CH 100V 1.5A SOT223
IRF7749L2TR1PBF
IRF7749L2TR1PBF
Infineon Technologies
MOSFET N-CH 60V 33A DIRECTFET
AUIRFZ44Z
AUIRFZ44Z
Infineon Technologies
MOSFET N-CH 55V 51A TO220
STB16NF25
STB16NF25
STMicroelectronics
MOSFET N-CH 30V 14.5A D2PAK
FDP085N10A
FDP085N10A
onsemi
MOSFET N-CH 100V 96A TO220-3
TPH3206LDGB
TPH3206LDGB
Transphorm
GANFET N-CH 650V 16A PQFN

Related Product By Brand

PESD12VS4UD,115
PESD12VS4UD,115
NXP USA Inc.
TVS DIODE 12VWM 24VC 6TSOP
DCF51AC256
DCF51AC256
NXP USA Inc.
DAUGHTER CARD FOR DEMOAC
BYC8DX-600,127
BYC8DX-600,127
NXP USA Inc.
NOW WEEN - BYC8DX-600 - HYPERFAS
BFU520XVL
BFU520XVL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
PHT6N06T,135
PHT6N06T,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT223
MC88915TFN70R2
MC88915TFN70R2
NXP USA Inc.
IC DRIVER CLK PLL 70MHZ 28-PLCC
PCF8523TS/1,118
PCF8523TS/1,118
NXP USA Inc.
IC RTC CLK/CALENDAR I2C 14-TSSOP
SC908LL64J0CLK
SC908LL64J0CLK
NXP USA Inc.
IC MCU 8BIT 64KB FLASH 80LQFP
SC18IS602BIPW,128
SC18IS602BIPW,128
NXP USA Inc.
I2C BUS CONTROLLER, CMOS, PDSO16
TDA18250HN/C1557
TDA18250HN/C1557
NXP USA Inc.
IC DGTL CABLE SIL TUNER 48HVQFN
MC17XSF500BEK
MC17XSF500BEK
NXP USA Inc.
IC PWR SWITCH N-CHAN 1:1 32HSOP
TDA8270AHN/C1,551
TDA8270AHN/C1,551
NXP USA Inc.
IC TUNER DGTL CBL MODEM 40HVQFN