NXP USA Inc.-BST72A,112 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	5V
Rds On (Max) @ Id, Vgs:	10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id:	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	20V
Input Capacitance (Ciss) (Max) @ Vds:	40 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	830mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92-3
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads

NXP USA Inc. BST72A,112