BSN254,126
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NXP USA Inc. BSN254,126

Manufacturer No:
BSN254,126
Manufacturer:
NXP USA Inc.
Package:
Tape & Box (TB)
Datasheet:
BSN254,126 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 310MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.4V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Similar Products

Part Number BSN254,126 BSN254A,126  
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.4V, 10V 2.4V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 300mA, 10V 5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 25 V 120 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Ta) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92-3 TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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