NXP USA Inc.-BSH207,135 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12 V
Current - Continuous Drain (Id) @ 25°C:	1.52A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:	600mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:	8.8 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	500 pF @ 9.6 V
FET Feature:	-
Power Dissipation (Max):	417mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-TSOP
Package / Case:	SC-74, SOT-457

NXP USA Inc. BSH207,135