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| Part Number | BSH112,235 | BSH111,235 |
|---|---|---|
| Manufacturer | NXP USA Inc. | Nexperia USA Inc. |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) | 335mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V | 4Ohm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 1mA | 1.3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - | 1 nC @ 8 V |
| Vgs (Max) | ±15V | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V | 40 pF @ 10 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 830mW (Tc) | 830mW (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | SOT-23 (TO-236AB) | TO-236AB |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
