NXP USA Inc.-BLS3135-65,114 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	75V
Frequency - Transition:	3.5GHz
Noise Figure (dB Typ @ f):	-
Gain:	7dB
Power - Max:	200W
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 2A, 5V
Current - Collector (Ic) (Max):	8A
Operating Temperature:	200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-422A
Supplier Device Package:	CDFM2

NXP USA Inc. BLS3135-65,114