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BLF6G10LS-160RN112
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NXP USA Inc. BLF6G10LS-160RN112

Manufacturer No:
BLF6G10LS-160RN112
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
BLF6G10LS-160RN112 Datasheet
ECAD Model:
-
Description:
RF POWER TRANSISTORS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Frequency - Transition:- 
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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In Stock

$80.31
10

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