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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single
BLA6G1011L-200RG112
BLA6G1011L-200RG112 Image
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NXP USA Inc. BLA6G1011L-200RG112
Manufacturer No:
BLA6G1011L-200RG112
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
BLA6G1011L-200RG112 Datasheet
ECAD Model:
-
Description:
POWER LDMOS TRANSISTOR, SOT502 (
Delivery:
Payment:
Product Attributes
Transistor Type:
-
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (Max):
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
-
Frequency - Transition:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
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UnitPrice:
$545.91
Quantity:
2
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